For a germanium sample, traces of gallium are added as an impurity. The resultant sample could behave like
The conductivity of a semiconductor increases with increase in temperature, because
For pure Ge semiconductor, quantity of electron and hole is 1019 e/m3 . If we doped a donor impurity in it with density 1023 e/m3, then quantity of hole (e/m3) in a semiconductor is
Mobility of electrons in n-type Ge is 5000 cm2 /V-s and conductivity is 5 mho/cm. If the effect of holes is negligible, then impurity concentration will be
In sample of pure silicon 1023 e/m3 is mixed to phosphorous. If all atoms are active, then what will be the resistivity at 20oC, if mobility of electron is 1200 cm2/V-s?
What will be conductivity of pure silicon crystal at 300 K temperature, if electron-hole pairs per cm3 are 1.072 x 1010, \(\mu_e\) = 1350 cm2/V-s and \(\mu_e\) = 480 cm2/V-s ?
Forbidden energy gap of Ge is 0.75 eV. Maximum wavelength of incident radiation of photon for producing electron-hole pair in germanium semiconductor is
In which case, the junction diode is not reverse biased?
Which of the following diode is reverse biased?
In the given figure, is the potential barrier across a p-n junction, when no battery is connected across the junction
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